Volume 40, Number 4, November II 1997
|Page(s)||453 - 458|
|Section||Cross-disciplinary physics and related areas of science and technology|
|Published online||01 September 2002|
Low-temperature epitaxy and transient diffusion mechanisms on Cu(100)
Physics Department 2, Fudan University, Shanghai
2 CCAST (World Laboratory), P.O. Box 8730, Beijing 10080, China
Corresponding author: email@example.com
Accepted: 3 October 1997
The transient diffusion processes in low-temperature epitaxial growth for the first time have been classified and studied by using molecular-dynamics simulations with a hybrid tight-binding–like potential and taking Cu on Cu(100) surface as an example. The observed diffraction-intensity oscillations show that a quasi–layer-by-layer growth may take place for temperatures as low as 100 K. Furthermore, it has been found that the impact cascade diffusion mechanism plays a noticeable role in promoting atomic mobility and improving the smoothness of thin-film growth in the initial stage.
PACS: 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy / 81.15.Jj – Ion and electron beam-assisted deposition; ion plating
© EDP Sciences, 1997
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.