| Issue |
Europhys. Lett.
Volume 40, Number 4, November II 1997
|
|
|---|---|---|
| Page(s) | 453 - 458 | |
| Section | Cross-disciplinary physics and related areas of science and technology | |
| DOI | https://doi.org/10.1209/epl/i1997-00487-7 | |
| Published online | 01 September 2002 | |
Low-temperature epitaxy and transient diffusion mechanisms on Cu(100)
1
Physics Department 2, Fudan University, Shanghai
200433, China
2
CCAST (World Laboratory), P.O. Box 8730, Beijing
10080, China
Corresponding author: hoyk@fudan.ac.cn
Received:
20
May
1997
Accepted:
3
October
1997
The transient diffusion processes in low-temperature epitaxial growth for the first time have been classified and studied by using molecular-dynamics simulations with a hybrid tight-binding–like potential and taking Cu on Cu(100) surface as an example. The observed diffraction-intensity oscillations show that a quasi–layer-by-layer growth may take place for temperatures as low as 100 K. Furthermore, it has been found that the impact cascade diffusion mechanism plays a noticeable role in promoting atomic mobility and improving the smoothness of thin-film growth in the initial stage.
PACS: 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy / 81.15.Jj – Ion and electron beam-assisted deposition; ion plating
© EDP Sciences, 1997
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