Issue |
Europhys. Lett.
Volume 44, Number 6, December II 1998
|
|
---|---|---|
Page(s) | 714 - 720 | |
Section | Condensed matter: structure, thermal and mechanical properties | |
DOI | https://doi.org/10.1209/epl/i1998-00530-3 | |
Published online | 01 September 2002 |
Electric-field–induced electron density response of GaAs and ZnSe
Institut für Physik, Universität Potsdam - D-14469 Potsdam, Germany
Received:
5
May
1998
Accepted:
28
October
1998
The response of the electron densities of GaAs and ZnSe to an external
electric field was probed by measuring the variation of the integral
intensity of several weak X-ray structure factors due to a field
parallel to [1 1 1]. In the range
we found a nearly linear dependence of the relative intensity variation
on E for low indexed reflections (2 2 2, 0 6 0)
and an additional E2-dependence for higher-indexed ones (4 4 2,
6 6 6). The results are interpreted in terms of a bond-charge model.
The linear effect can be interpreted by the redistribution of valence
charges from bonds parallel to E into bonds lying oblique
(bond-charge transfer) whereas the origin of the non-linear effect is
still unclear. After the exclusion of lattice effects (piezo-electric
effect, internal strain) it ought to be allocated to a charge density
response of the core region.
PACS: 61.10.-i – X-ray diffraction and scattering / 61.50.Lt – Crystal binding; cohesive energy / 71.20.Nr – Semiconductor compounds
© EDP Sciences, 1998
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