| Issue |
Europhys. Lett.
Volume 46, Number 3, May I 1999
|
|
|---|---|---|
| Page(s) | 376 - 381 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1999-00272-8 | |
| Published online | 01 September 2002 | |
Electronic properties of semiconducting rhenium silicide
1
Belarusian State University of Informatics and Radioelectronics
P. Browka 6, 220027 Minsk, Belarus
2
Hahn Meitner Institute, Department Photovoltaics
Rudower Chaussee, D-12489 Berlin, Germany
3
Institute of Solid State and Materials Research Dresden
Helmholtz Str. 20, D-01069 Dresden, Germany
Received:
23
October
1998
Accepted:
24
February
1999
For the first time, theoretical arguments for the semiconducting
properties of the 
phase have been given by means of ab initio
linear muffin-tin orbital method (LMTO) calculations. It is shown that the material is
indeed a narrow-gap semiconductor with an indirect gap value of 0.16 eV. The first
direct transition with appreciable oscillator strength at 0.30 eV is predicted.
PACS: 71.20.Nr – Semiconductor compounds / 71.15.Mb – Density functional theory, local density approximation
© EDP Sciences, 1999
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