Volume 46, Number 3, May I 1999
|Page(s)||376 - 381|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Electronic properties of semiconducting rhenium silicide
Belarusian State University of Informatics and Radioelectronics
P. Browka 6, 220027 Minsk, Belarus
2 Hahn Meitner Institute, Department Photovoltaics Rudower Chaussee, D-12489 Berlin, Germany
3 Institute of Solid State and Materials Research Dresden Helmholtz Str. 20, D-01069 Dresden, Germany
Accepted: 24 February 1999
For the first time, theoretical arguments for the semiconducting properties of the phase have been given by means of ab initio linear muffin-tin orbital method (LMTO) calculations. It is shown that the material is indeed a narrow-gap semiconductor with an indirect gap value of 0.16 eV. The first direct transition with appreciable oscillator strength at 0.30 eV is predicted.
PACS: 71.20.Nr – Semiconductor compounds / 71.15.Mb – Density functional theory, local density approximation
© EDP Sciences, 1999
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