Volume 47, Number 4, August II 1999
|Page(s)||487 - 493|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Observation of colossal positive and negative magnetoresistance in perovskite-type manganese oxide
Department of Physics, The Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong, China
2 Departament de Física Fonamental, Universitat de Barcelona Diagonal 647, Barcelona 08028, Spain
Accepted: 15 June 1999
The co-existence of colossal positive and negative magnetoresistance has been observed in a perovskite-type material . The hysteretic behavior of resistivity in temperature and magnetic field suggests the existence of phase transition. Positive magnetoresistance (positive- up to 10000% was observed below insulator-metal transition temperature, , accompanied by a negative magnetoresistance (negative-MR) with further increasing magnetic field. The positive-MR may be attributed to the field-induced carrier localization (CL), whereas the very large negative-MR is believed to be due to the field-induced collapse of charge ordering.
PACS: 72.15.Gd – Galvanomagnetic and other magnetotransport effects / 75.30.Kz – Magnetic phase boundaries (including magnetic transitions, metamagnetism, etc.) / 71.30.+h – Metal–insulator transitions and other electronic transitions
© EDP Sciences, 1999
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