Volume 47, Number 6, September II 1999
|Page(s)||701 - 707|
|Section||Condensed matter: structure, mechanical and thermal properties|
|Published online||01 September 2002|
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures
Istituto Nazionale per la Fisica della Materia and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca - Via Cozzi 53, 20125 Milano, Italy
2 School of Physics and Astronomy, University of Nottingham, University Park Nottingham NG7 2RD, UK
Accepted: 13 July 1999
The two-dimensional to three-dimensional transition in highly strained grown on high index (N11) substrates was investigated. The samples were characterised by photoluminescence measurements and atomic force microscopy. Controlled changes in the 2D/3D growth critical thickness have been observed by changing the substrate orientation. The results have been interpreted by means of an equilibrium model which takes into account the effects of substrate orientation. In-island strain relaxation, affected in a controlled way by substrate orientation, is found to play the major role in determining the critical thickness value.
PACS: 68.35.Rh – Phase transitions and critical phenomena / 68.65.+g – Low-dimensional structures (superlattices, quantum well structures, multylayers): structure and nonelectronic properties / 78.66.Fd – III-V semiconductors
© EDP Sciences, 1999
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