| Issue |
Europhys. Lett.
Volume 50, Number 1, April I 2000
|
|
|---|---|---|
| Page(s) | 81 - 87 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2000-00238-x | |
| Published online | 01 September 2002 | |
Universal 
depression by irradiation defects
in underdoped and overdoped cuprates?
1
Laboratoire des Solides Irradiés, CEA, CNRS UMR 7642,
Ecole Polytechnique
91128 Palaiseau cedex, France
2
IRC in Superconductivity, University of Cambridge
Madingley Road, Cambridge CB3 0HE, UK
3
CRTBT, CNRS, BP 166X - 38042 Grenoble cedex, France
4
LEMHE, Université Paris-Sud - 91405 Orsay cedex, France
Received:
3
September
1999
Accepted:
21
January
2000
We report on a study of the influence of defects introduced in the CuO2
planes of cuprates in a wide range of hole dopings x. and
electrical resistivity 
measurements have been performed on
electron-irradiated 
and 
single crystals. A universal scaling between the
decrease in and 
, where 
is the
increase of the 2D resistance induced by the defects and n is the carrier concentration equal to
x, is found for all the samples investigated here. This demonstrates that the hole content is
the relevant parameter to describe the transport properties all over the phase diagram, in
contradiction with a recent suggestion of a change in the number of carriers
from x to 
at the optimal doping. Moreover, the analysis of our data
suggests that strong scattering persists on the overdoped side.-2
PACS: 74.62.Dh – Effects of crystal defects, doping and substitution / 74.25.Fy – Transport properties (electric and thermal conductivity, thermoelectric effects, etc.) / 74.72.-h – High-
compounds
© EDP Sciences, 2000
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