Universal depression by irradiation defects in underdoped and overdoped cuprates?

F. Rullier-Albenque; P. A. Vieillefond; H. Alloul; A. W. Tyler; P. Lejay; J. F. Marucco

doi:10.1209/epl/i2000-00238-x

All issues

Volume 50 / No 1 (April I 2000)

Europhys. Lett., 50 1 (2000) 81-87

Abstract

Issue		Europhys. Lett. Volume 50, Number 1, April I 2000


Page(s)		81 - 87
Section		Condensed matter: electronic structure, electrical, magnetic, and optical properties
DOI		https://doi.org/10.1209/epl/i2000-00238-x
Published online		01 September 2002

Europhys. Lett., 50 (1), pp. 81-87 (2000)

Universal $T_{\ab c}$ depression by irradiation defects in underdoped and overdoped cuprates?

F. Rullier-Albenque¹, P. A. Vieillefond¹, H. Alloul¹, A. W. Tyler², P. Lejay³ and J. F. Marucco⁴

¹ Laboratoire des Solides Irradiés, CEA, CNRS UMR 7642, Ecole Polytechnique 91128 Palaiseau cedex, France
² IRC in Superconductivity, University of Cambridge Madingley Road, Cambridge CB3 0HE, UK
³ CRTBT, CNRS, BP 166X - 38042 Grenoble cedex, France
⁴ LEMHE, Université Paris-Sud - 91405 Orsay cedex, France

Received: 3 September 1999
Accepted: 21 January 2000

Abstract

We report on a study of the influence of defects introduced in the CuO₂ planes of cuprates in a wide range of hole dopings x. $T_{\ab c}$ and electrical resistivity $\rho (T)$ measurements have been performed on electron-irradiated $\ab{YBa}_{2}\ab{Cu}_{3}\ab{O}_{7-\delta }$ and $\ab{Tl}_{2}\ab{Ba}_{2}\ab{CuO}_{6+x}$ single crystals. A universal scaling between the decrease in $T_{\ab c}$ and $\Delta \rho_{\ab{2D}}\times n$ , where $\Delta \rho _{2D}$ is the increase of the 2D resistance induced by the defects and n is the carrier concentration equal to x, is found for all the samples investigated here. This demonstrates that the hole content is the relevant parameter to describe the transport properties all over the phase diagram, in contradiction with a recent suggestion of a change in the number of carriers from x to $1-x$ at the optimal doping. Moreover, the analysis of our data suggests that strong scattering persists on the overdoped side.-2

PACS: 74.62.Dh – Effects of crystal defects, doping and substitution / 74.25.Fy – Transport properties (electric and thermal conductivity, thermoelectric effects, etc.) / 74.72.-h – High- $T_\ab{c}$ compounds

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.