Volume 50, Number 1, April I 2000
|Page(s)||81 - 87|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 September 2002|
Universal depression by irradiation defects in underdoped and overdoped cuprates?
Laboratoire des Solides Irradiés, CEA, CNRS UMR 7642,
91128 Palaiseau cedex, France
2 IRC in Superconductivity, University of Cambridge Madingley Road, Cambridge CB3 0HE, UK
3 CRTBT, CNRS, BP 166X - 38042 Grenoble cedex, France
4 LEMHE, Université Paris-Sud - 91405 Orsay cedex, France
Accepted: 21 January 2000
We report on a study of the influence of defects introduced in the CuO2 planes of cuprates in a wide range of hole dopings x. and electrical resistivity measurements have been performed on electron-irradiated and single crystals. A universal scaling between the decrease in and , where is the increase of the 2D resistance induced by the defects and n is the carrier concentration equal to x, is found for all the samples investigated here. This demonstrates that the hole content is the relevant parameter to describe the transport properties all over the phase diagram, in contradiction with a recent suggestion of a change in the number of carriers from x to at the optimal doping. Moreover, the analysis of our data suggests that strong scattering persists on the overdoped side.-2
PACS: 74.62.Dh – Effects of crystal defects, doping and substitution / 74.25.Fy – Transport properties (electric and thermal conductivity, thermoelectric effects, etc.) / 74.72.-h – High- compounds
© EDP Sciences, 2000
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