Volume 52, Number 2, October II 2000
|Page(s)||178 - 184|
|Section||Condensed matter: structure, mechanical and thermal properties|
|Published online||01 September 2002|
Co-planar carbon nanotube hybrid molecular transistors fabricated in parallel
Centre d'Elaboration des Matériaux et d'Etudes Structurales (CEMES-CNRS)
29, rue Jeanne Marvig, 31055 Toulouse cedex 4, France
Corresponding author: email@example.com
Accepted: 31 August 2000
We show that a molecular combing process can be used to fabricate in parallel, in one step, a large number of co-planar carbon nanotube hybrid molecular transistors. The gate voltage is applied by the electrodes of a nanojunction thus increasing the miniaturisation of the device. We show with such devices that the bias coplanar grid is not very active on metal-like nanotubes and that the same conductance change can be obtained by deforming the tube by the tip of an atomic force microscope. On the contrary, the grid is very active on a semiconductor-like tube leading to transconductances of 160 nA/V.
PACS: 68.45.Gd – Wetting / 81.05.Tp – Fullerenes and related materials; diamonds, graphite / 85.40.Sz – Deposition technology
© EDP Sciences, 2000
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