| Issue |
Europhys. Lett.
Volume 55, Number 5, September 2001
|
|
|---|---|---|
| Page(s) | 705 - 711 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2001-00471-9 | |
| Published online | 01 December 2003 | |
Evidence for the 5f localisation in thin 
layers
1
European Commission, Joint Research Centre, Institute for
Transuranium Elements P.B. 2340, D-76175 Karlsruhe,
Germany
2
Department of Electronic Structures, Charles University
Ke Karlovu 5, CZ-121 16 Prague 2, Czech Republic
Received:
30
March
2001
Accepted:
11
June
2001
High-purity ultrathin layers of deposited on 
were studied by X-ray photoelectron (XPS) and high-resolution
valence band (UPS) spectroscopy. The itinerant character of the
5f states is gradually lost with reduced thickness, and the
localised 5f states, which appear as a broad peak 1.6
below the Fermi level, were observed for one monolayer. At
intermediate thickness three narrow peaks appear close to the
Fermi level, which are identical to features observed in
and other materials. A comparative study of
bulk α- indicates a surface re-organisation
yielding more localised f-electrons at conditions of
thermodynamic equilibrium.
PACS: 71.20.Gj – Other metals and alloys / 71.28.+d – Narrow-band systems; intermediate-valence solids / 79.60.-i – Photoemission and photoelectron spectra
© EDP Sciences, 2001
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