Volume 56, Number 6, December 2001
|Page(s)||836 - 841|
|Section||Condensed matter: electronic structure, electrical magnetic and optical properties|
|Published online||01 December 2003|
Current switching of resistive states in normal-metal-manganite single-crystal point contacts
Institute of Solid State Physics,
RAN - Chernogolovka, Moscow dist., 142432 Russia
2 Moscow State Steel and Alloys Institute - Leninskii pr-t, 4, Moscow, 119991 Russia
Accepted: 4 October 2001
Resistive properties of point contacts in normal-metal-manganite heterojunctions have been investigated on the base of , , single crystals. At considerable current levels the current-voltage characteristics of point contacts exhibit features in the form of resistance peaks at lower temperatures. Colossal magnetoresistance also considerably increases under transport current in the investigated heterojunctions. It has been assumed that the observed current switching effects are due to phase separation of manganites under the electric current.
PACS: 71.28.+d – Narrow-band systems, intermediate-valence solids / 75.30.-m – Intrinsic properties of magnetically ordered materials / 75.30.Vn – Colossal magnetoresistance
© EDP Sciences, 2001
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.