| Issue |
Europhys. Lett.
Volume 56, Number 6, December 2001
|
|
|---|---|---|
| Page(s) | 836 - 841 | |
| Section | Condensed matter: electronic structure, electrical magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2001-00595-4 | |
| Published online | 01 December 2003 | |
Current switching of resistive states in normal-metal-manganite single-crystal point contacts
1
Institute of Solid State Physics,
RAN - Chernogolovka, Moscow dist., 142432 Russia
2
Moscow State Steel and Alloys Institute -
Leninskii pr-t, 4, Moscow, 119991 Russia
Received:
5
July
2001
Accepted:
4
October
2001
Resistive properties of point contacts in normal-metal-manganite
heterojunctions have been investigated on the base of 
, 
, 
single crystals. At considerable current
levels the current-voltage characteristics of point contacts exhibit
features in the form of resistance peaks at lower
temperatures. Colossal magnetoresistance also considerably increases
under transport current in the investigated heterojunctions. It has
been assumed that the observed current switching effects are due to
phase separation of manganites under the electric current.
PACS: 71.28.+d – Narrow-band systems, intermediate-valence solids / 75.30.-m – Intrinsic properties of magnetically ordered materials / 75.30.Vn – Colossal magnetoresistance
© EDP Sciences, 2001
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