Issue |
EPL
Volume 97, Number 5, March 2012
|
|
---|---|---|
Article Number | 57009 | |
Number of page(s) | 5 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/97/57009 | |
Published online | 05 March 2012 |
Colossal electroresistance in La0.8Ca0.2MnO3 films on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrates
1
Department of Physics, the University of Hong Kong - Pokfulam Road, Hong Kong
2
College of Physics and Electronic Information Science, Tianjin Normal University - Tianjin 300074, China
Received:
17
December
2011
Accepted:
7
February
2012
Epitaxial La0.8Ca0.2MnO3 (LCMO) thin films with varied thicknesses were successfully grown on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) substrates with pulsed-laser deposition. Due to a large lattice mismatch between LCMO and PMN-PT, in-plane tensile strain was introduced into the LCMO layers. The tensile strain could be controlled by varying the layer thickness of LCMO. It was found that the in-plane tensile strain in LCMO layers could enhance the electroresistance (ER) effect significantly. A maximum value of ER ((R10 μA−R1 mA)/R10 μA×100%) was found to be ∼80% in a 10 nm thick LCMO film that suffered a 2.21% in-plane tensile strain. The mechanism for the impact of strain on the ER effect is discussed within the framework of the electron-lattice coupling and the phase separation scenario.
PACS: 73.50.-h – Electronic transport phenomena in thin films / 77.65.-j – Piezoelectricity and electromechanical effects / 75.70.-i – Magnetic properties of thin films, surfaces, and interfaces
© EPLA, 2012
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.