Volume 62, Number 6, June 2003
|Page(s)||862 - 868|
|Section||Condensed matter: structure, mechanical and thermal properties|
|Published online||01 June 2003|
On the solid-phase epitaxy of the -:/- interface
Istituto Nazionale per la Fisica della Materia (INFM), Unità di Ricerca di Cagliari Cittadella Universitaria - I-09042 Monserrato (CA), Italy
2 Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria I-09042 Monserrato (CA), Italy
Accepted: 24 April 2003
By means of large-scale atomistic simulations we investigate the recrystallization features of an interface between boron-doped amorphous silicon and crystalline silicon. Present simulations are both consistent with available experimental information and predictive as far as the relevant elementary mechanisms occurring during solid-phase epitaxy. In particular, we prove that the experimentally observed solubility limit for electrically active boron is due to sizeable boron ripening phenomena, occurring in the amorphous-silicon region, as well as during recrystallization.
PACS: 61.72.Tt – Doping and impurity implantation in germanium and silicon / 61.43.Dq – Amorphous semiconductors, metals, and alloys / 81.10.Jt – Growth from solid phases (including multiphase diffusion and recrystallization)
© EDP Sciences, 2003
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