Issue |
Europhys. Lett.
Volume 63, Number 3, August 2003
|
|
---|---|---|
Page(s) | 459 - 464 | |
Section | Interdisciplinary physics and related areas of science and technology | |
DOI | https://doi.org/10.1209/epl/i2003-00536-9 | |
Published online | 01 November 2003 |
Self-assembled formation of vertical silicon-rich quantum wells and
quantum wire superlattices
Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut CH-5232 Villigen, Switzerland
Received:
3
February
2003
Accepted:
2
June
2003
An original mechanism is described for the self-assembly of
nanometer-sized structures in the silicon germanium material
system. The self-organized formation of vertical -rich
quantum wells (VSQW) is obtained during the growth of
x on narrow line-shaped
mesa, which are oriented
in
on the
(001) surface. The
occurrence of the VSQW is accompanied by the formation of {15 3
23} facets on top of the mesa. Detailed structural insights have
been gathered by cross-sectional transmission electron
microscopy, secondary electron microscopy and photoluminescence
measurements.
quantum wires are embedded into the VSQW
forming a superlattice containing
and
wires.
Intense low-temperature photoluminescence, which can be assigned
to this one-dimensional superlattice, has been observed.
PACS: 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy / 68.65.-k – Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties / 78.67.Lt – Quantum wires
© EDP Sciences, 2003
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.