| Issue |
Europhys. Lett.
Volume 63, Number 3, August 2003
|
|
|---|---|---|
| Page(s) | 459 - 464 | |
| Section | Interdisciplinary physics and related areas of science and technology | |
| DOI | https://doi.org/10.1209/epl/i2003-00536-9 | |
| Published online | 01 November 2003 | |
Self-assembled formation of vertical silicon-rich quantum wells and 
quantum wire superlattices
Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut CH-5232 Villigen, Switzerland
Received:
3
February
2003
Accepted:
2
June
2003
An original mechanism is described for the self-assembly of
nanometer-sized structures in the silicon germanium material
system. The self-organized formation of vertical 
-rich
quantum wells (VSQW) is obtained during the growth of
x on narrow line-shaped mesa, which are oriented
in 
on the (001) surface. The
occurrence of the VSQW is accompanied by the formation of {15 3
23} facets on top of the mesa. Detailed structural insights have
been gathered by cross-sectional transmission electron
microscopy, secondary electron microscopy and photoluminescence
measurements. quantum wires are embedded into the VSQW
forming a superlattice containing 
and wires.
Intense low-temperature photoluminescence, which can be assigned
to this one-dimensional superlattice, has been observed.
PACS: 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy / 68.65.-k – Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties / 78.67.Lt – Quantum wires
© EDP Sciences, 2003
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