Volume 64, Number 6, December 2003
|Page(s)||797 - 802|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 November 2003|
Ferromagnetism in co-doped :
Department of Physics, Pusan National University -
Busan 609-735, Korea
2 COMTECS Limited, Advanced Materials Research Laboratory - Daegu 704-702, Korea
3 Division of Nano-Science and Technology, Pusan National University Busan 609-735, Korea
4 Korea Basic Science Institute, Busan branch - Busan 609-735, Korea
Corresponding author: email@example.com
Accepted: 9 October 2003
We investigated the induced ferromagnetism by the co-doping of in :. For this study, we fabricated : and co-doped : by the sol-gel method. While the : thin film showed no ferromagnetic behavior, we observed a clear magnetic hysteresis loop in the co-doped : thin film above 350. In order to analyze the role of in :, we carried out a structural study using X-ray diffraction and X-ray photoemission spectroscopy measurement, and discussed the results. In the magnetic-force-microscopy measurement, we did not observe any magnetic clustering corresponding to the segregated secondary phase. In this paper, we discussed some viewpoints for ferromagnetism in the case of co-doped :.
PACS: 75.50.Pp – Magnetic semiconductors / 61.72.Vv – Doping and impurity implantation in III-V and II-VI semiconductors / 81.15.-z – Methods of deposition of films and coatings; film growth and epitaxy
© EDP Sciences, 2003
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