Issue |
Europhys. Lett.
Volume 65, Number 6, March 2004
|
|
---|---|---|
Page(s) | 823 - 829 | |
Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
DOI | https://doi.org/10.1209/epl/i2003-10198-7 | |
Published online | 01 March 2004 |
Current dependence of the magnetoresistance in
a colloidal-sphere-masked ion-milled
thin film
1
National Laboratory for Superconductivity, Institute of Physics Chinese Academy of Sciences - Beijing 100080, PRC
2
Centre for Superconducting and Magnetic Materials (CSMM) and Department of Physics, National University of Singapore 2 Science Drive 3, Singapore 117542
3
Temasek Laboratories, National University of Singapore Engineering Drive 3, Singapore 119260
Corresponding author: lijie@ssc.iphy.ac.cn
Received:
11
August
2003
Accepted:
8
January
2004
An epitaxial thin film covered
with a monolayer of colloidal spheres was ion-milled so that
structural discontinuities were involved. Nonlinear V-I
characteristics have been observed, revealing that the zero-field
resistance of the sample decreases with increasing measuring
current I. In a magnetic field, however, the resistance varies
non-monotonically with I. An inflexion appears around
. Accordingly, the magnetoresistance also correlates
with I. A maximum value as high as
(
)
is recorded at liquid nitrogen in 1.5
when
. The
drastic current dependence of the magnetoresistance is believed
to come from the ion-milling–induced structural and magnetic
disorders and to be related to the inelastic scattering of the
spin-polarized electrons at the disorders. The possible underlying
mechanisms are discussed in detail.
PACS: 75.47.Gk – Colossal magnetoresistance / 75.47.Lx – Manganites / 72.25.Dc – Spin polarized transport in semiconductors
© EDP Sciences, 2004
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