Volume 65, Number 6, March 2004
|Page(s)||823 - 829|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 March 2004|
Current dependence of the magnetoresistance in a colloidal-sphere-masked ion-milled thin film
National Laboratory for Superconductivity, Institute of Physics Chinese Academy of Sciences - Beijing 100080, PRC
2 Centre for Superconducting and Magnetic Materials (CSMM) and Department of Physics, National University of Singapore 2 Science Drive 3, Singapore 117542
3 Temasek Laboratories, National University of Singapore Engineering Drive 3, Singapore 119260
Corresponding author: email@example.com
Accepted: 8 January 2004
An epitaxial thin film covered with a monolayer of colloidal spheres was ion-milled so that structural discontinuities were involved. Nonlinear V-I characteristics have been observed, revealing that the zero-field resistance of the sample decreases with increasing measuring current I. In a magnetic field, however, the resistance varies non-monotonically with I. An inflexion appears around . Accordingly, the magnetoresistance also correlates with I. A maximum value as high as () is recorded at liquid nitrogen in 1.5 when . The drastic current dependence of the magnetoresistance is believed to come from the ion-milling–induced structural and magnetic disorders and to be related to the inelastic scattering of the spin-polarized electrons at the disorders. The possible underlying mechanisms are discussed in detail.
PACS: 75.47.Gk – Colossal magnetoresistance / 75.47.Lx – Manganites / 72.25.Dc – Spin polarized transport in semiconductors
© EDP Sciences, 2004
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