| Issue |
Europhys. Lett.
Volume 66, Number 6, June 2004
|
|
|---|---|---|
| Page(s) | 868 - 873 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2004-10032-x | |
| Published online | 01 June 2004 | |
Effects of magnetic field on the manganite-based trilayer junction
1
State Key Laboratory for Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences Beijing 100080, PRC
2
Department of Electronic Science and Engineering, Nanjing University Nanjing 210093, Jiangsu, PRC
Received:
29
January
2004
Accepted:
15
April
2004
A heterojunction has been fabricated by growing a
-
(LPCM) film on
an 
buffer layer above the 0.5
% 
-doped
substrate, and its behavior under magnetic field
is studied. The magnetic field greatly affects the rectifying
property and the resistance of the junction, causing an extremely
large magnetoresistance (MR). The MR is asymmetric with respect
to the direction of the current, and can be either positive or
negative, depending on temperature and bias current. A change of
the band structure of LPCM under external field may be
responsible for these observations.
PACS: 75.47.Gk – Colossal magnetoresistance / 73.50.-h – Electronic transport phenomena in thin films / 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
© EDP Sciences, 2004
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