Volume 66, Number 6, June 2004
|Page(s)||868 - 873|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 June 2004|
Effects of magnetic field on the manganite-based trilayer junction
State Key Laboratory for Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences Beijing 100080, PRC
2 Department of Electronic Science and Engineering, Nanjing University Nanjing 210093, Jiangsu, PRC
Accepted: 15 April 2004
A heterojunction has been fabricated by growing a - (LPCM) film on an buffer layer above the 0.5% -doped substrate, and its behavior under magnetic field is studied. The magnetic field greatly affects the rectifying property and the resistance of the junction, causing an extremely large magnetoresistance (MR). The MR is asymmetric with respect to the direction of the current, and can be either positive or negative, depending on temperature and bias current. A change of the band structure of LPCM under external field may be responsible for these observations.
PACS: 75.47.Gk – Colossal magnetoresistance / 73.50.-h – Electronic transport phenomena in thin films / 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
© EDP Sciences, 2004
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.