| Issue |
Europhys. Lett.
Volume 67, Number 2, July 2004
|
|
|---|---|---|
| Page(s) | 247 - 253 | |
| Section | Interdisciplinary physics and related areas of science and technology | |
| DOI | https://doi.org/10.1209/epl/i2003-10281-1 | |
| Published online | 01 July 2004 | |
Dependence of the hydrogen spin dynamics
on the conductivity type in 
as evidenced
by its muonium analogue
1
Departamento de Física de Materiales, Universidad Autónoma de Madrid 28049 Madrid, Spain
2
Institut Laue-Langevin - 6 rue Jules Horowitz, 38042 Grenoble, France and Instituto de Ciencia de Materiales de Aragón, CSIC - Zaragoza, Spain
3
Departamento de Física, Universidade de Coimbra - P-3004-516 Coimbra, Portugal
Received:
2
September
2003
Accepted:
30
April
2004
Isolated hydrogen in p- and n-type was studied by
muon spin polarization using muonium as light analogue. Transverse
field spectra as a function of temperature were collected and
analysed taking into account the muonium ionisation state.
Evidence is presented showing that the dynamics of the hydrogen
electronic spin depends on the conductivity type (p or
n) of the semiconductor and that μSR is sensitive to
the presence of shallow donors in . On the other hand,
the probability of formation of deep states or the electronic
structure of shallow donors is not influenced by the type of
conductivity.
PACS: 72.80.Ey – III-V and II-VI semiconductors / 76.75.+i – Muon spin rotation and relaxation / 72.20.Dp – General theory, scattering mechanisms
© EDP Sciences, 2004
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