Issue |
Europhys. Lett.
Volume 67, Number 5, September 2004
|
|
---|---|---|
Page(s) | 827 - 833 | |
Section | Condensed matter: structure, mechanical and thermal properties | |
DOI | https://doi.org/10.1209/epl/i2004-10116-7 | |
Published online | 01 August 2004 |
Evidence for strong interaction of PTCDA molecules
with defects on sulphur-passivated
Institut für Physik, Halbleiterphysik, Technische Universität Chemnitz D-09107, Chemnitz, Germany
Corresponding author: salvan@physik.tu-chemnitz.de
Received:
5
February
2004
Accepted:
18
June
2004
Raman spectroscopy was employed to investigate the initial stage
of interface formation between 3,4,9,10-perylenetetracarboxylic
dianhydride (PTCDA) molecules and sulphur-passivated
surfaces. Monitoring the Raman spectra for
submonolayer coverage as well as after annealing above the
desorption temperature of PTCDA reveals the presence of a
-
mode which is shifted by 13
towards
lower frequency compared to its value in bulk PTCDA. The
molecules remaining at the surface after annealing are proposed
to interact with surface defects predominantly induced by the
dopant atoms. This proposal is supported by density-functional
theory calculations considering the interaction of dopant atoms
with single molecules.
PACS: 68.60.-p – Physical properties of thin films, nonelectronic / 68.35.Dv – Composition, segregation; defects and impurities / 78.30.Jw – Organic compounds, polymers
© EDP Sciences, 2004
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