Volume 67, Number 5, September 2004
|Page(s)||834 - 839|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 August 2004|
Evidence for a bulk complex order parameter in thin films
School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Science, Tel Aviv University - Ramat Aviv 69978, Israel
2 Department of Electrical and Electronic Engineering College of Judea and Samaria - Ariel, Israel
3 1. Physikalisches Institut, Universität Stuttgart Pfaffenwaldring 57, D-70550 Stuttgart, Germany
4 General Physics Institute, Russian Academy of Sciences - Moscow, Russia
Accepted: 15 June 2004
We have measured the penetration depth of overdoped (-) thin films using two different methods. The change of the penetration depth as a function of temperature has been measured using the parallel-plate resonator (PPR), while its absolute value was obtained from a quasi-optical transmission measurement. Both sets of measurements are compatible with an order parameter of the form , with and , indicating a finite gap at low temperature. Below 15, the drop of the scattering rate of uncondensed carriers becomes steeper in contrast to a flattening observed for optimally doped films. This decrease supports our results on the penetration depth temperature dependence. The findings are in agreement with tunneling measurements on similar - thin films.
PACS: 74.20.Rp – Pairing symmetries (other than s-wave) / 74.72.Bk – -based cuprates / 78.66.-w – Optical properties of specific thin films
© EDP Sciences, 2004
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