Volume 69, Number 4, February 2005
|Page(s)||602 - 608|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||14 January 2005|
Resistance fluctuations near integer quantum Hall transitions in mesoscopic samples
Department of Electrical Engineering, Princeton University Princeton, NJ 08544, USA
2 Department of Physics and Astronomy, University of British Columbia Vancouver, BC V6T 1Z1, Canada
Accepted: 20 December 2004
We perform first-principles simulations to study the resistance fluctuations of mesoscopic samples, near transitions between quantum Hall plateaus. We use six-terminal geometry and sample sizes similar to those of real devices and calculate the Hall and longitudinal resistances using the Landauer formula. Our simulations recapture all the observed experimental features. We then use a generalization of the Landauer-Büttiker model, based on the interplay between tunneling and chiral currents, to explain the three regimes with distinct fluctuations observed, and identify the central regime as the critical region.
PACS: 73.23.-b – Electronic transport in mesoscopic systems / 73.43.-f – Quantum Hall effects / 71.30.+h – Metal-insulator transitions and other electronic transitions
© EDP Sciences, 2005
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