Volume 69, Number 4, February 2005
|Page(s)||570 - 576|
|Section||Condensed matter: structure, mechanical and thermal properties|
|Published online||26 January 2005|
Strain state analysis of hetero-epitaxial systems
Institut für Laser- und Plasmaphysik, Universität Essen - 45117 Essen, Germany
Accepted: 21 December 2004
We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process.
PACS: 68.55.-a – Thin film structure and morphology / 68.60.-p – Physical properties of thin films, nonelectronic / 68.90.+g – Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures
© EDP Sciences, 2005
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