Transverse “resistance overshoot” in a two-dimensional electron gas in the quantum Hall effect regime

¹ Minerva Center and Jack and Pearl Resnick Institute of Advanced Technology Department of Physics, Bar-Ilan University - 52900 Ramat-Gan, Israel
² School of Physics & Astronomy, Raymond & Beverly Sackler Faculty of Exact Sciences, Tel-Aviv University - 69978 Tel Aviv, Israel
³ Paul-Drude-Institut für Festkörperelektronik - Hausvogteiplatz 5-7 10117, Berlin, Germany
⁴ Cavendish Laboratory, University of Cambridge Madingley Road, Cambridge CB3 0HE, UK

Received: 15 October 2004
Accepted: 31 January 2005

Abstract

We investigate the peculiarities of the “overshoot” phenomena in the transverse Hall resistance R_xy in . Near the low magnetic-field end of the quantum Hall effect plateaus, when the filling factor ν approaches an integer i, R_xy overshoots the normal plateau value . However, if magnetic field B increases further, R_xy decreases to its normal value. It is shown that in the investigated sample n-, overshoots exist for almost all ν. Existence of overshoot in R_xy observed in different materials and for different ν, where splitting of the adjacent Landau bands has different character, hints at the common origin of this effect. Comparison of the experimental curves for and with and without overshoot showed that this effect exists in the whole interval between plateaus, not only in the region where R_xy exceeds the normal plateau value.