Issue |
Europhys. Lett.
Volume 69, Number 6, March 2005
|
|
---|---|---|
Page(s) | 997 - 1002 | |
Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
DOI | https://doi.org/10.1209/epl/i2004-10454-4 | |
Published online | 23 February 2005 |
Transverse “resistance overshoot”
in a
two-dimensional electron gas
in the quantum Hall effect regime
1
Minerva Center and Jack and Pearl Resnick Institute of Advanced Technology Department of Physics, Bar-Ilan University - 52900 Ramat-Gan, Israel
2
School of Physics & Astronomy, Raymond & Beverly Sackler Faculty of Exact Sciences, Tel-Aviv University - 69978 Tel Aviv, Israel
3
Paul-Drude-Institut für Festkörperelektronik - Hausvogteiplatz 5-7 10117, Berlin, Germany
4
Cavendish Laboratory, University of Cambridge Madingley Road, Cambridge CB3 0HE, UK
Received:
15
October
2004
Accepted:
31
January
2005
We investigate the peculiarities of the “overshoot” phenomena
in the transverse Hall resistance Rxy in .
Near the low magnetic-field end of the quantum Hall effect
plateaus, when the filling factor ν approaches an integer
i, Rxy overshoots the normal plateau value
.
However, if magnetic field B increases further, Rxy
decreases to its normal value. It is shown that in the
investigated sample n-
, overshoots
exist for almost all ν. Existence of overshoot in Rxy
observed in different materials and for different ν, where
splitting of the adjacent Landau bands has different character,
hints at the common origin of this effect. Comparison of the
experimental curves
for
and
with
and without overshoot showed that this effect exists in the whole
interval between plateaus, not only in the region where Rxy
exceeds the normal plateau value.
PACS: 73.43.-f – Quantum Hall effects / 72.20.Ee – Mobility edges; hopping transport
© EDP Sciences, 2005
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