| Issue |
Europhys. Lett.
Volume 71, Number 4, August 2005
|
|
|---|---|---|
| Page(s) | 665 - 671 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2005-10123-2 | |
| Published online | 22 July 2005 | |
Interaction-induced transverse magnetoresistance with
a temperature-dependent sign in a 
-
structure
1
Institute of Semiconductor Physics - Novosibirsk 630090, Russia
2
GHMF, MPI-FKF/CNRS - BP 166, F-38042 Grenoble, Cedex 9, France
3
INSA-Toulouse - 31077 Cedex 4, France
4
Institut Universitaire de France - Toulouse, France
5
Imperial College of Science - London WC7 2BW, UK
6
University College - London WC 15 75, UK
Received:
17
May
2005
Accepted:
20
June
2005
The work is devoted to interaction-induced magnetoresistance in a two-dimensional electron gas in a heterostructure.
Several types of magnetoresistance behavior are discussed
including a magnetoresistance that changes sign with temperature.
The data is analyzed using the recent theory of
interaction-induced magnetoresistance for arbitrary transport
regime and any type of disorder potential.
PACS: 72.20.-i – Conductivity phenomena in semiconductors and insulators
© EDP Sciences, 2005
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