Volume 71, Number 4, August 2005
|Page(s)||665 - 671|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||22 July 2005|
Interaction-induced transverse magnetoresistance with a temperature-dependent sign in a - structure
Institute of Semiconductor Physics - Novosibirsk 630090, Russia
2 GHMF, MPI-FKF/CNRS - BP 166, F-38042 Grenoble, Cedex 9, France
3 INSA-Toulouse - 31077 Cedex 4, France
4 Institut Universitaire de France - Toulouse, France
5 Imperial College of Science - London WC7 2BW, UK
6 University College - London WC 15 75, UK
Accepted: 20 June 2005
The work is devoted to interaction-induced magnetoresistance in a two-dimensional electron gas in a heterostructure. Several types of magnetoresistance behavior are discussed including a magnetoresistance that changes sign with temperature. The data is analyzed using the recent theory of interaction-induced magnetoresistance for arbitrary transport regime and any type of disorder potential.
PACS: 72.20.-i – Conductivity phenomena in semiconductors and insulators
© EDP Sciences, 2005
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