A possible model for the positive magnetoresistance in manganite-based all-perovskite oxide films p-n junction

D. J. Wang; Y. W. Xie; C. M. Xiong; B. G. Shen; J. R. Sun

doi:10.1209/epl/i2005-10411-9

All issues

Volume 73 / No 3 (February 2006)

Europhys. Lett., 73 3 (2006) 401-407

Abstract

Issue		Europhys. Lett. Volume 73, Number 3, February 2006


Page(s)		401 - 407
Section		Condensed matter: electronic structure, electrical, magnetic, and optical properties
DOI		https://doi.org/10.1209/epl/i2005-10411-9
Published online		04 January 2006

Europhys. Lett., 73 (3), pp. 401-407 (2006)

A possible model for the positive magnetoresistance in manganite-based all-perovskite oxide films p-n junction

D. J. Wang, Y. W. Xie, C. M. Xiong, B. G. Shen and J. R. Sun

State Key Laboratory for Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences Beijing 100080, PRC

Received: 12 November 2005
Accepted: 8 December 2005

Abstract

The electrical transport properties of a heterostructure $\chem{La_{0.32}Pr_{0.35}Ca_{0.33}MnO_{3}}$ (LPCM)/ $\chem{Nb}$ doped $\chem{SrTiO_{3}}$ (STON) junction were studied. The LPCM film is metallic and ferromagnetic below the Curie temperature (T_c) with a colossal magnetoresistance (MR) effect found around T_c. The junction shows good rectifying property. Negative MR was observed by two-terminal current-voltage (I-V) curves measurement. However, the sign of the MR depends on temperature and the current applied with the four-probe technique. Positive MR may be attributed to the competition between LPCM MR and the junction MR. A simple model is proposed to interpret the related origin.

PACS: 75.47.Gk – Colossal magnetoresistance / 73.50.-h – Electronic transport phenomena in thin films / 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

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