Volume 73, Number 3, February 2006
|Page(s)||401 - 407|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||04 January 2006|
A possible model for the positive magnetoresistance in manganite-based all-perovskite oxide films p-n junction
State Key Laboratory for Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences Beijing 100080, PRC
Accepted: 8 December 2005
The electrical transport properties of a heterostructure (LPCM)/ doped (STON) junction were studied. The LPCM film is metallic and ferromagnetic below the Curie temperature (Tc) with a colossal magnetoresistance (MR) effect found around Tc. The junction shows good rectifying property. Negative MR was observed by two-terminal current-voltage (I-V) curves measurement. However, the sign of the MR depends on temperature and the current applied with the four-probe technique. Positive MR may be attributed to the competition between LPCM MR and the junction MR. A simple model is proposed to interpret the related origin.
PACS: 75.47.Gk – Colossal magnetoresistance / 73.50.-h – Electronic transport phenomena in thin films / 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
© EDP Sciences, 2006
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