| Issue |
Europhys. Lett.
Volume 73, Number 6, March 2006
|
|
|---|---|---|
| Page(s) | 927 - 933 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2005-10482-6 | |
| Published online | 10 February 2006 | |
Superefficient electric-field–induced spin-orbit splitting in strained 
-type quantum wells
School of Information and Communication Technology, Royal Institute of Technology Electrum 229, SE-16440 Kista, Sweden
Received:
23
June
2005
Accepted:
26
January
2006
We investigate theoretically the efficiency of the
Rashba effect, i.e. the spin-orbit splitting resulting from an electric
field. In contrast to previous studies, where the carriers have usually been
taken to be electrons, we focus on holes and are able to demonstrate
remarkable improvements of the effect by several orders of magnitude. We
also show that the frequently-neglected lattice-mismatch between GaAs and
AlGaAs can be used to further enhance the efficiency of the wave vector
splitting mechanism. The Rashba effect is the fundamental mechanism behind
the Datta-Das spin transistor and we find that for a small electric field of
the spin precession length becomes only 
.
PACS: 71.70.Ej – Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect / 71.70.Fk – Strain-induced splitting / 85.75.Hh – Spin polarized field effect transistors
© EDP Sciences, 2006
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