Volume 73, Number 6, March 2006
|Page(s)||920 - 926|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||15 February 2006|
Origin of the inner ring in photoluminescence patterns of quantum well excitons
Department of Physics and Astronomy, Cardiff University - Cardiff CF24 3YB, UK
2 Department of Physics, University of California at San Diego La Jolla, CA 92093-0319, USA
3 Materials Department, University of California at Santa Barbara Santa Barbara, CA 93106-5050, USA
Accepted: 30 January 2006
In order to explain and model the inner ring in photoluminescence (PL) patterns of indirect excitons in GaAs/AlGaAs quantum wells (QWs), we develop a microscopic approach formulated in terms of coupled nonlinear equations for the diffusion, thermalization and optical decay of the particles. The origin of the inner ring is unambiguously identified: it is due to cooling of indirect excitons in their propagation from the excitation spot.
PACS: 71.35.-y – Excitons and related phenomena / 73.63.Hs – Electronic transport in nanoscale materials and structures: Quantum wells / 78.67.De – Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures: Quantum wells
© EDP Sciences, 2006
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