Volume 74, Number 1, April 2006
|Page(s)||177 - 180|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||24 February 2006|
A simple approach to form nanocrystals embedded in amorphous high-k gate dielectric by pulsed laser ablation
School of Materials Science and Engineering, Nanyang Technological University Nanyang Avenue, Singapore 639798
Corresponding author: email@example.com
Accepted: 7 February 2006
We have successfully developed a novel method to fabricate the memory structure of nanocrystals embedded in amorphous high-k dielectric using pulsed laser ablation. The mean size and aerial density of the nanocrystals are estimated to be about 9 and , respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical.
PACS: 77.55.+f – Dielectric thin films / 78.40.Fy – Semiconductors / 78.67.Bf – Nanocrystals and nanoparticles
© EDP Sciences, 2006
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