A simple approach to form nanocrystals embedded in amorphous high-k gate dielectric by pulsed laser ablation

C. L. Yuan; P. Darmawan; Y. Setiawan; P. S. Lee

doi:10.1209/epl/i2005-10505-4

All issues

Volume 74 / No 1 (April 2006)

Europhys. Lett., 74 1 (2006) 177-180

Abstract

Issue		Europhys. Lett. Volume 74, Number 1, April 2006


Page(s)		177 - 180
Section		Condensed matter: electronic structure, electrical, magnetic, and optical properties
DOI		https://doi.org/10.1209/epl/i2005-10505-4
Published online		24 February 2006

Europhys. Lett., 74 (1), pp. 177-180 (2006)

A simple approach to form $\chem{Ge}$ nanocrystals embedded in amorphous $\chem{Lu_{2}{O}_{3}}$ high-k gate dielectric by pulsed laser ablation

C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee

School of Materials Science and Engineering, Nanyang Technological University Nanyang Avenue, Singapore 639798

Corresponding author: pslee@ntu.edu.sg

Received: 2 December 2005
Accepted: 7 February 2006

Abstract

We have successfully developed a novel method to fabricate the memory structure of $\chem{Ge}$ nanocrystals embedded in amorphous $\chem{Lu_{2}O_{3}}$ high-k dielectric using pulsed laser ablation. The mean size and aerial density of the $\chem{Ge}$ nanocrystals are estimated to be about 9 $\un{nm}$ and $7\times 10^{11}\un{ cm}^{-2}$ , respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical.

PACS: 77.55.+f – Dielectric thin films / 78.40.Fy – Semiconductors / 78.67.Bf – Nanocrystals and nanoparticles

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