Volume 74, Number 5, June 2006
|Page(s)||875 - 881|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||03 May 2006|
New type of Fano resonant tunneling via Anderson impurities in superlattice
Department of Physics and HKU-CAS Joint Laboratory on New Materials The University of Hong Kong - Pokfulam Road, Hong Kong, PRC
2 National Laboratory of Solid State Microstructures and Department of Physics Nanjing University - Nanjing 210093, PRC
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences - Beijing 100083, PRC
Corresponding author: email@example.com
Accepted: 5 April 2006
The spectrum of differential tunneling conductance in Si-doped GaAs/AlAs superlattice is measured at low electric fields. The conductance spectra feature a zero-bias peak and a low-bias dip at low temperatures. By taking into account the quantum interference between tunneling paths via superlattice miniband and via Coulomb blockade levels of impurities, we theoretically show that such a peak-dip structure is attributed to a Fano resonance where the peak always appears at the zero bias and the line shape is essentially described by a new function with the asymmetry parameter . As the temperature increases, the peak-dip structure fades out due to thermal fluctuations. Good agreement between experiment and theory enables us to distinguish the zero-bias resonance from the usual Kondo resonance.
PACS: 72.10.Fk – Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect) / 73.21.Cd – Superlattices / 73.23.Hk – Coulomb blockade; single-electron tunneling
© EDP Sciences, 2006
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