Volume 74, Number 5, June 2006
|Page(s)||882 - 888|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||10 May 2006|
Total angular momentum conservation during tunnelling through semiconductor barriers
CNRS-LPN - Route de Nozay, F-91460 Marcsoussis, France
2 Paul Scherrer Institut - CH-5232 Villigen, Switzerland
3 Division of Engineering and Applied Sciences, Harvard University Cambridge, MA 02138, USA
4 GHMFL, CNRS - F-38042 Grenoble, France
5 Université de Neuchâtel - CH-2000 Neuchâtel, Switzerland
6 STMicroelectronics - F-38926 Crolles Cedex, France
Corresponding author: email@example.com
Accepted: 12 April 2006
We have investigated the electrical transport through strained p-type double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy-hole levels, whereas there is no sign of tunnelling through the first light-hole state. This establishes for the first time the conservation of the total angular momentum in valence band resonant tunnelling. It is also shown that conduction through light-hole states is possible in many structures due to tunnelling of carriers from bulk emitter states.
PACS: 72.25.Dc – Spin polarized transport in semiconductors / 73.40.Gk – Tunneling
© EDP Sciences, 2006
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