| Issue |
EPL
Volume 77, Number 6, March 2007
|
|
|---|---|---|
| Article Number | 67001 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/77/67001 | |
| Published online | 01 March 2007 | |
Leakage conduction mechanism of amorphous 
high-
dielectric films fabricated by pulsed laser ablation
School of Materials Science Engineering, Nanyang Technological University - Singapore 639798
Corresponding author: pslee@ntu.edu.sg
Received:
6
December
2006
Accepted:
30
January
2007
Amorphous 
thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 
at 1 V accumulation bias was obtained for 4.5 nm thick thin film deposited at room temperature followed by post-deposition anneal (PDA) at 
C in oxygen ambient. The leakage conduction mechanisms of amorphous films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.
PACS: 77.55.+f – Dielectric thin films / 72.80.Sk – Insulators / 73.40.Qv – Metal-insulator-semiconductor structures (including semiconductor-to- insulator)
© Europhysics Letters Association, 2007
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