Volume 77, Number 6, March 2007
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||01 March 2007|
Leakage conduction mechanism of amorphous high- dielectric films fabricated by pulsed laser ablation
School of Materials Science Engineering, Nanyang Technological University - Singapore 639798
Corresponding author: firstname.lastname@example.org
Accepted: 30 January 2007
Amorphous thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of at 1 V accumulation bias was obtained for 4.5 nm thick thin film deposited at room temperature followed by post-deposition anneal (PDA) at C in oxygen ambient. The leakage conduction mechanisms of amorphous films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.
PACS: 77.55.+f – Dielectric thin films / 72.80.Sk – Insulators / 73.40.Qv – Metal-insulator-semiconductor structures (including semiconductor-to- insulator)
© Europhysics Letters Association, 2007
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