Volume 78, Number 3, May 2007
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||20 April 2007|
Superconductivity in high-pressure SiH4
Department of Physics and Engineering Physics, University of Saskatchewan - Saskatoon, S7N 5E2, Canada
2 National Laboratory of Superhard Materials, Jilin University - Changchun, 130012, PRC
Accepted: 23 March 2007
A combination of static and dynamical first-principles electronic calculations of silane, SiH4, at high pressure has revealed a novel monoclinic structure with symmetry. This high-pressure phase is metallic and composed of layers of SiH4 bridged by H bonds. Perturbative linear response calculations at 90 and 125 GPa predict large electron-phonon couplings yielding an electron-phonon coupling parameter close to 0.9. The application of McMillan equation gives a superconducting critical temperature between 45 and 55 K.
PACS: 74.10.+v – Occurrence, potential candidates / 74.70.Ad – Metals; alloys and binary compounds (including A15, MgB2, etc.) / 74.62.Fj – Pressure effects
© Europhysics Letters Association, 2007
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