Doping-induced spectral shifts in two-dimensional metal oxides

Department of Physics, University of California Davis - Davis, CA 95616, USA

Received: 19 February 2013
Accepted: 25 February 2013

Abstract

Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high-temperature superconductivity in cuprates (hole doped) and to surprisingly high T_c in HfNCl (T_c = 25.5 K, electron doped). First-principles calculations of hole doping of the layered delafossite CuAlO₂ reveal unexpectedly large doping-induced shifts in spectral density, strongly in opposition to the rigid-band picture that is widely used as an accepted guideline. These spectral shifts, of similar origin as the charge transfer used to produce negative electron affinity surfaces and adjust Schottky barrier heights, drastically alter the character of the Fermi level carriers, leading in this material to an O-Cu-O molecule-based carrier (or polaron, at low doping) rather than a nearly pure-Cu hole as in a rigid-band picture. First-principles linear response electron-phonon coupling (EPC) calculations reveal, as a consequence, net weak EPC and no superconductivity rather than the high T_c obtained previously using rigid-band expectations. These specifically two-dimensional dipole-layer–driven spectral shifts provide new insights into materials design in layered materials for functionalities besides superconductivity.