| Issue |
EPL
Volume 81, Number 3, February 2008
|
|
|---|---|---|
| Article Number | 38003 | |
| Number of page(s) | 4 | |
| Section | Interdisciplinary Physics and Related Areas of Science and Technology | |
| DOI | https://doi.org/10.1209/0295-5075/81/38003 | |
| Published online | 03 January 2008 | |
Spin properties of 2D charge carriers in semiconductors with inverted bands
Semiconductor Physics Institute - A. Goštauto 11, LT-01108 Vilnius, Lithuania
Received:
17
September
2007
Accepted:
29
November
2007
This letter shows how the inversion of energy bands is reflected in spin
properties of a free charge carrier in the narrow-gap semiconductor Hg
CdxTe. The concept of the spin surface (analogue of the Bloch sphere)
is used to represent all possible spin states of a ballistic 2D carrier. It was
found that the spin dynamics in HgTe/HgCdxTe quantum wells may take place
on spherical, spheroidal, disk- or needle-like spin surfaces.
PACS: 85.75.-d – Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields / 75.10.Hk – Classical spin models / 73.61.Ga – II–VI semiconductors
© EPLA, 2008
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