Volume 81, Number 3, February 2008
|Number of page(s)||4|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||03 January 2008|
Spin properties of 2D charge carriers in semiconductors with inverted bands
Semiconductor Physics Institute - A. Goštauto 11, LT-01108 Vilnius, Lithuania
Accepted: 29 November 2007
This letter shows how the inversion of energy bands is reflected in spin properties of a free charge carrier in the narrow-gap semiconductor HgCdxTe. The concept of the spin surface (analogue of the Bloch sphere) is used to represent all possible spin states of a ballistic 2D carrier. It was found that the spin dynamics in HgTe/HgCdxTe quantum wells may take place on spherical, spheroidal, disk- or needle-like spin surfaces.
PACS: 85.75.-d – Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields / 75.10.Hk – Classical spin models / 73.61.Ga – II–VI semiconductors
© EPLA, 2008
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.