Volume 84, Number 6, December 2008
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||12 January 2009|
Implications of phase-segregation on structure, terahertz emission and magnetization of Bi (FeMnx)O3 (0 x 0.5) thin films
Institute of Laser Engineering, Osaka University - 2-6 Yamadaoka, Suita 565-0871, Osaka, Japan
2 Institute of Scientific and Industrial Research, Osaka University - 8-1 Mihogaoka, Ibaraki 567-0047, Osaka, Japan
Corresponding authors: email@example.com firstname.lastname@example.org
Accepted: 18 November 2008
Structural, magnetic and terahertz emission properties of Bi (FeMnx)O3 (0 x 0.5) thin films of various thicknesses were studied. A transition from coherently strained structure to relaxed structure at a film thickness (t) of ~ 80– 90 nm occurs only for x < 0.2. It is shown that terahertz-emission efficiency is not deteriorated with increasing Mn-doping (x). The magnetic moment of thin films (t 85 nm) exhibits only a weak enhancement with increasing x —a feature suggesting that Mn-doping is ineffective in inducing ferromagnetism in BiFeO3. The thicker films (t 150 nm), on the contrary, possess larger magnetic moment which evidently arises from the segregated magnetic MnFe2O4 phase.
PACS: 77.22.Ej – Polarization and depolarization / 77.84.-s – Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials / 78.47.-p – Spectroscopy of solid state dynamics
© EPLA, 2008
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