| Issue |
EPL
Volume 84, Number 6, December 2008
|
|
|---|---|---|
| Article Number | 67015 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/84/67015 | |
| Published online | 12 January 2009 | |
Electron-hole asymmetry and quantum critical point in hole-doped BaFe2As2
Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences Beijing 100190, China
Corresponding author: gangx@aphy.iphy.ac.cn
Received:
18
August
2008
Accepted:
20
November
2008
We show, from first-principles calculations, that the hole-doped side of
Fe-As
based compounds is different from its electron-doped counterparts. The electron
side is characterized as an itinerant metal with Fermi surface nesting, and SDW-to-NM quantum
critical point (QCP) is realized by doping. For the hole-doped side, on the other hand,
orbital-selective magnetic ordering develops together with checkboard anti-ferromagnetic
(AF) ordering without lattice distortion. A unique SDW-to-AF QCP is achieved, and the
J2 = 
criterion (in the approximate J1&J2
model) is satisfied at a hole-doping level of about x = 0.7. The
observed superconductivity is located in the vicinity of QCP for both sides.
PACS: 74.70.-b – Superconducting materials / 74.25.Jb – Electronic structure / 74.25.Ha – Magnetic properties
© EPLA, 2008
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