Volume 84, Number 6, December 2008
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||12 January 2009|
Electron-hole asymmetry and quantum critical point in hole-doped BaFe2As2
Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences Beijing 100190, China
Corresponding author: firstname.lastname@example.org
Accepted: 20 November 2008
We show, from first-principles calculations, that the hole-doped side of Fe-Asbased compounds is different from its electron-doped counterparts. The electron side is characterized as an itinerant metal with Fermi surface nesting, and SDW-to-NM quantum critical point (QCP) is realized by doping. For the hole-doped side, on the other hand, orbital-selective magnetic ordering develops together with checkboard anti-ferromagnetic (AF) ordering without lattice distortion. A unique SDW-to-AF QCP is achieved, and the J2 = criterion (in the approximate J1&J2 model) is satisfied at a hole-doping level of about x = 0.7. The observed superconductivity is located in the vicinity of QCP for both sides.
PACS: 74.70.-b – Superconducting materials / 74.25.Jb – Electronic structure / 74.25.Ha – Magnetic properties
© EPLA, 2008
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