Volume 85, Number 1, January 2009
|Number of page(s)||6|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||12 January 2009|
Multi quantum well structures in deep blue organic light-emitting diode
Department of Materials Science, Indian Association for the Cultivation of Science Jadavpur, Kolkata 700032, India
2 Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University 1, University Road, Tainan 701, Taiwan, ROC
Accepted: 21 November 2008
Multi quantum well structures in the deep blue emitted system 2-methyl-9,10-di(1-napthyl)anthracene (α, α-MADN) are fabricated. The device structures are optimized with respect to the layer thickness and number of pairs forming the quantum wells. The Electroluminescence spectra are de-convoluted into 3 peaks with peak positions 432 nm, 458 nm and 500 nm, which are believed to arise due to the recombination of electrons and holes in the MADN, MADN/NPB interface and Alq3, respectively. It is observed that a better confinement of excitonic charges in different layers causes the efficiency to enhance by more than 25% using optimized thickness parameters and 2 pairs of quantum well structures.
PACS: 85.60.Jb – Light-emitting devices
© EPLA, 2009
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