Volume 85, Number 4, February 2009
|Number of page(s)||4|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||16 February 2009|
Dopant contrast in the helium ion microscope
Department of Engineering Materials, The University of Sheffield - Sheffield, S1 3JD, UK, EU
2 School of Engineering and Applied Sciences and the Center for Nanoscale Systems, Harvard University Cambridge, MA 02138, USA
Corresponding author: firstname.lastname@example.org
Accepted: 25 January 2009
Due to miniaturisation of semiconductor devices, there is an increasing need for nanoscale characterisation of dopant distributions. Scanning electron microscopy (SEM) has been identified as a potential technique to fulfil this need, providing that a small enough probe size (~ 0.1 nm) could be achieved. Probes of this size are not possible in a low-voltage scanning electron microscope but a He-ion beam can be focussed to probe sizes as small as 0.25 nm; a significant improvement over that attainable in the SEM. This paper presents results from the first use of helium ion microscopy (HeIM) to examine dopant contrast in semiconductor materials. It was found that the spatial resolution is improved when compared to SEM and that the contrast mechanism has similarities making HeIM an ideal candidate for future 2-dimensional nanoscale dopant mapping.
PACS: 68.37.Vj – Field emission and field-ion microscopy / 68.37.Hk – Scanning electron microscopy (SEM) (including EBIC) / 61.72.uf – Ge and Si
© EPLA, 2009
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.