Volume 85, Number 6, March 2009
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||06 April 2009|
Spin Hall effect in IV-VI semiconductors
Department of Physics, A. Mickiewicz University - ul. Umultowska 85, 61-614 Poznań, Poland, EU
2 Department of Physics, Rzeszów University of Technology - al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland, EU
3 Department of Physics and CFIF, Instituto Superior Técnico, TU Lisbon - Av. Rovisco Pais, 1049-001 Lisbon, Portugal, EU
4 Institute of Molecular Physics, Polish Academy of Sciences - ul. Smoluchowskiego 17, 60-179 Poznań, Poland, EU
Corresponding author: email@example.com
Accepted: 26 February 2009
In the framework of the Dimmock model of the energy spectrum in IV-VI narrow-gap semiconductors (like PbTe, SnTe, and their alloys), we calculate the intrinsic contribution to spin Hall conductivity. The calculations show that a strong spin-orbit interaction in these compounds leads to a nonvanishing spin Hall effect. Moreover, this effect is associated with kinetic terms which describe the deviation of the Dimmock model from a simpler model of Dirac. The nonzero spin Hall conductivity, however, occurs only when the effective mass of electrons in the conduction band is different from the effective mass of holes in the valence band.
PACS: 72.25.Dc – Spin polarized transport in semiconductors / 72.20.My – Galvanomagnetic and other magnetotransport effects / 71.20.Nr – Semiconductor compounds
© EPLA, 2009
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