Interface relaxation and electrostatic charge depletion in the oxide heterostructure LaAlO₃/SrTiO₃

¹  ICCMP, Universidade de Brasília - 70904-970 Brasília, DF, Brazil
²  Institut für Physik, Universität Augsburg - 86135 Augsburg, Germany, EU

Received: 10 November 2008
Accepted: 30 March 2009

Abstract

Performing an analysis within density functional theory, we develop insight into the structural and electronic properties of the oxide heterostructure LaAlO₃/SrTiO₃. Electrostatic surface effects are decomposed from the internal lattice distortion in order to clarify their interplay. We first study the interface relaxation by a multi-layer system without surface, and the surface effects, separately, by a substrate-film system. While elongation of the TiO₆ octahedra at the interface enhances the metallicity, reduction of the film thickness has the opposite effect due to a growing charge depletion. The interplay of these two effects, as reflected by the full lattice relaxation in the substrate-film system, however, strongly depends on the film thickness. An inversion of the TiO₆ distortion pattern for films thinner than four LaAlO₃ layers results in an insulating state.