Volume 106, Number 5, June 2014
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||10 June 2014|
δ-doped LaAlO3-SrTiO3 interface: Electrical transport and characterization of the interface potential
1 Condensed Matter - Low Dimensional Systems Laboratory, Department of Physics, Indian Institute of Technology Kanpur 208016, India
2 School of Physical Sciences, Jawaharlal Nehru University - New Delhi 110067, India
3 CSIR - National Physical Laboratory, Dr. K. S. Krishnan Marg - New Delhi 110012, India
Received: 6 March 2014
Accepted: 20 May 2014
Here we investigate the LaAlO3-SrTiO3 heterostructure with δ-doping of the interface by LaMnO3 at less than one monolayer. This doping strongly inhibits the formation of a mobile electron layer at the interface. This results in a giant increase of the resistance and the thermopower of the heterostructure. Several aspects of this phenomena are investigated. A model to calculate the carrier concentration is presented and the effect of doping with detailed temperature dependence is analyzed in terms of model parameters and weak-scattering theory. The large enhancement of the thermopower is attributed to the increased spin and orbital entropy originating from the LaMnO3 monolayer.
PACS: 73.20.-r – Electron states at surfaces and interfaces / 73.40.-c – Electronic transport in interface structures / 73.50.Lw – Thermoelectric effects
© EPLA, 2014
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