Volume 86, Number 2, April 2009
|Number of page(s)||5|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||04 May 2009|
Quantitative dopant contrast in the helium ion microscope
The Department of Engineering Materials, The University of Sheffield - Sheffield, South Yorkshire, S1 3JD, UK, EU
2 Carl Zeiss NTS - Carl-Zeiss-Straße 56, 73447, Oberkochen, Germany, EU
3 Carl Zeiss SMT Inc, ALIS Business Unit - 1 Corp Way, Peabody, MA 01960 USA
Corresponding author: firstname.lastname@example.org
Accepted: 30 March 2009
As semiconductor devices shrink in size, the challenge of characterisation of their dopant distributions intensifies. Scanning electron microscopy (SEM) has been proposed as a suitable technique to overcome this challenge. However, current low-voltage (LV) SEMs are incapable of the probe sizes required for nano-scale dopant mapping, but the recently commercialised helium ion microscope (HeIM) is capable of probe sizes of 0.25 nm; a significant improvement over LVSEM. This paper discusses the dopant contrast mechanism in the HeIM and is the first demonstration of nano-scale, quantitative dopant mapping in the HeIM.
PACS: 68.37.Vj – Field emission and field-ion microscopy / 68.37.Hk – Scanning electron microscopy (SEM) (including EBIC) / 61.72.uf – Ge and Si
© EPLA, 2009
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