| Issue |
EPL
Volume 87, Number 4, August 2009
|
|
|---|---|---|
| Article Number | 47006 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/87/47006 | |
| Published online | 07 September 2009 | |
Anomalous bias dependence in magnetic tunnel junctions based on half-metallic 
with heteroepitaxial 
tunnel barrier
1
MINT center, University of Alabama - Tuscaloosa, AL 35487, USA
2
Physics Department, Brown University - Providence, RI 02912, USA
Corresponding author: gxmiao@mit.edu
Received:
29
June
2009
Accepted:
5
August
2009
We report on the anomalous bias dependence of tunneling magnetoresistance (TMR) in (
)-based magnetic tunnel junctions as a function of barrier thickness. For a relatively thin 
barrier, the TMR is asymmetric and exhibits sign reversal at a specific bias voltage with varying thickness due to defect mediated resonant tunneling. On the other hand, diffusive transport dominates for sufficiently thick barriers, and a diverging TMR is observed close to zero bias.
PACS: 73.40.Gk – Tunneling / 72.25.-b – Spin polarized transport / 73.40.Sx – Metal-semiconductor-metal structures
© EPLA, 2009
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