Volume 87, Number 4, August 2009
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||07 September 2009|
Anomalous bias dependence in magnetic tunnel junctions based on half-metallic with heteroepitaxial tunnel barrier
MINT center, University of Alabama - Tuscaloosa, AL 35487, USA
2 Physics Department, Brown University - Providence, RI 02912, USA
Corresponding author: firstname.lastname@example.org
Accepted: 5 August 2009
We report on the anomalous bias dependence of tunneling magnetoresistance (TMR) in ()-based magnetic tunnel junctions as a function of barrier thickness. For a relatively thin barrier, the TMR is asymmetric and exhibits sign reversal at a specific bias voltage with varying thickness due to defect mediated resonant tunneling. On the other hand, diffusive transport dominates for sufficiently thick barriers, and a diverging TMR is observed close to zero bias.
PACS: 73.40.Gk – Tunneling / 72.25.-b – Spin polarized transport / 73.40.Sx – Metal-semiconductor-metal structures
© EPLA, 2009
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