Volume 87, Number 4, August 2009
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||08 September 2009|
Effect of the surface states on photoluminescence from surface quantum wells
Institute of Physics, National Academy of Sciences of Ukraine - Kiev, 03028, Ukraine
2 U. S. Army Aviation and Missile RDEC - Redstone Arsenal, AL 35898, USA
3 Department of Physics, Jackson State University - Jackson, MS 39217, USA
4 Department of Physics, Duke University - Durham, NC 27708, USA
5 Nitronex Corporation - Raleigh, NC 27703, USA
Corresponding author: firstname.lastname@example.org
We report on photoluminescence (PL) measurements at 85 K for surface quantum wells (SQWs) with a width in the range of 1.51–2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QWs of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The PL hence originates from the recombination of surface-acceptor-bound () excitons. Two types of acceptors were identified.
PACS: 78.55.-m – Photoluminescence, properties and materials
This paper has been formally withdrawn on ethical grounds because the names of Drs Everitt, Roberts, Rajagopal and Cook were included in the author list without their having any knowledge or discussion of the content of the article, nor having given permission for it to be submitted, nor having given approval for inclusion of their names as co-authors.
EPL submission policy states quite clearly that: "If several persons are listed as authors, the corresponding author takes full responsibility that the co-authors agree with the submission and further processing of the manuscript."
© EPLA, 2009
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