Volume 87, Number 5, September 2009
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||17 September 2009|
Narrowing of band gap and low-temperature spin glass behavior of FeNi co-doped ZnO nanowires
Laboratory of Advanced Materials, Department of Material Science and Engineering, Tsinghua University Beijing 100084, China
2 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Science Beijing 100083, China
3 State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University - Beijing 100871, China
Accepted: 17 August 2009
This letter reports on the Raman, optical and magnetic properties of FeNi co-doped ZnO nanowires prepared via a soft chemical solution method. The microstructural investigations show that the NiFe co-dopants are substituted into wurtzite ZnO nanostructure without forming any secondary phase. The co-doped nanowires show a remarkable reduction of 34 nm (267.9 meV) in the optical band gap, while suppression in the deep-level defect transition in visible luminescence. Furthermore, these nanowires exhibit ferromagnetism and an interesting low-temperature spin glass behavior, which may arise due to the presence of disorder and strong interactions of frustrated spin moments of Ni and Fe co-dopants on the ZnO lattice sites.
PACS: 74.25.Gz – Optical properties / 74.25.Ha – Magnetic properties
© EPLA, 2009
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