Electron-electron scattering effect on spin relaxation in multi-valley nanostructures

M. M. Glazov; E. L. Ivchenko

doi:10.1209/0295-5075/87/57005

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Volume 87, Number 5, September 2009

EPL, 87 (2009) 57005

Electron-electron scattering effect on spin relaxation in multi-valley nanostructures

M. M. Glazov and E. L. Ivchenko

Ioffe Physical-Technical Institute RAS - 194021 St.-Petersburg, Russia

Corresponding author: glazov@coherent.ioffe.ru

Received: 19 June 2009
Accepted: 19 August 2009

Abstract

We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from that in a single-valley system. The theory is applied to Si/SiGe (001)-grown quantum wells where two valleys are simultaneously populated by free carriers. The dependences of the spin relaxation rate on temperature, electron concentration and valley-orbit splitting are calculated and discussed. We demonstrate that in a wide range of temperatures the electron-electron collisions can govern spin relaxation in high-quality Si/SiGe quantum wells.

PACS: 72.25.Rb – Spin relaxation and scattering / 71.70.Ej – Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

© EPLA, 2009

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Issue		EPL Volume 87, Number 5, September 2009


Article Number		57005
Number of page(s)		6
Section		Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
DOI		https://doi.org/10.1209/0295-5075/87/57005
Published online		21 September 2009