Volume 89, Number 3, February 2010
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||17 February 2010|
Formation of magnetic dots in an ultrathin Co film forced by a patterned buffer
Institute of Physics, Polish Academy of Sciences - Al. Lotników 32/46, 02-668 Warsaw, Poland, EU
2 Faculty of Physics, University of Białystok - ul. Lipowa 41, 15-424 Białystok, Poland, EU
Corresponding author: firstname.lastname@example.org
Accepted: 15 January 2010
The novel method for fabricating magnetic dots reported in this work exploits the dependence of the magnetic anisotropy of an ultrathin Co film on its thickness and on the type of the buffer layer. A patterned buffer prepared as self-assembled Au islands with a lateral size of several hundred nanometres grown on a Mo film surface induces mono-domain dots magnetized perpendicularly to the film plane in the epitaxial Co layer. Polar magneto-optical Kerr magnetometry and magnetic force microscopy have been used to investigate the magnetization reversal of the dots. Nucleation of the reversed magnetic domain followed by the unpinned movement of domain walls is discussed as a possible mechanism responsible for magnetization switching.
PACS: 75.75.Cd – Fabrication of magnetic nanostructures / 75.30.Gw – Magnetic anisotropy / 75.60.Jk – Magnetization reversal mechanisms
© EPLA, 2010
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