Volume 89, Number 3, February 2010
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||17 February 2010|
Transverse magnetoresistance in layered electron systems
Baku State University - 23, Z.Khalilov st., Baku, Az1147, Azerbaijan
Corresponding author: email@example.com
Accepted: 18 January 2010
We calculate the transverse magnetoresistance in layered electronic systems at nonquantizing magnetic fields parallel and perpendicular to the layer plane and discuss the effect of the relationship between the Fermi level and the mini-band width, and also the direction and magnitude of the magnetic field on the transverse magnetoresistance and its sign. We show that the transverse magnetoresistance of a degenerate quasi–three-dimensional electron gas in the fields parallel to the layer plane is negative in weak fields and is positive in strong fields.
PACS: 73.63.-b – Electronic transport in nanoscale materials and structures
© EPLA, 2010
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