| Issue |
EPL
Volume 92, Number 2, October 2010
|
|
|---|---|---|
| Article Number | 27002 | |
| Number of page(s) | 3 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/92/27002 | |
| Published online | 16 November 2010 | |
Instability in the Imma phase of Si
1
Department of Physics, Florida Atlantic University - Boca Raton, FL 33431-0991, USA
2
IBM Research Division, T. J. Watson Research Center - Yorktown Heights, NY 10598, USA
Received:
26
June
2010
Accepted:
13
October
2010
The Imma phase of Si is found by first-principles calculations to have unstable states at the two ends of its structural range. These instabilities force first-order transitions to both the β-Sn and the simple hexagonal phase. These transitions occur for the non-vibrating crystal at 96 and 110 kbar, respectively. Two special computational procedures are described that have been developed to find the instabilities.
PACS: 71.15.Nc – Total energy and cohesive energy calculations / 61.50.Ks – Crystallographic aspects of phase transformations; pressure effects / 62.50.-p – High-pressure effects in solids and liquids
© EPLA, 2010
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