Volume 92, Number 2, October 2010
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||20 October 2010|
Graphene transport at high carrier densities using a polymer electrolyte gate
Department of Physics, National University of Singapore - 2 Science Drive 3, Singapore 117542
2 NUS Graduate School for Integrative Sciences and Engineering (NGS) - Singapore 117456
3 Department of Chemistry, National University of Singapore - 3 Science Drive 3, Singapore 117543
4 Nanocore, National University of Singapore - 4 Engineering Drive 3, Singapore 117576
Accepted: 30 September 2010
We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6×1013/cm2 are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2×1013/cm2), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3×1013/cm2, whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically enhanced scattering rate.
PACS: 72.80.Vp – Electronic transport in graphene / 73.63.-b – Electronic transport in nanoscale materials and structures / 73.40.Mr – Semiconductor-electrolyte contacts
© EPLA, 2010
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