Volume 92, Number 3, November 2010
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||24 November 2010|
Valence band of graphite oxide
Department of Physics, Daegu University - Gyeongsan 712-714, Korea
2 R&D Team 2, IT Solution, Samsung Electronics Co. - Suwon 443-742, Korea
3 Beamline Research Division, Pohang Accelerator Laboratory (PAL) - Pohang 790-784, Korea
Accepted: 22 October 2010
We investigated the valence band structure of graphite oxide by photoelectron spectroscopy at the Pohang Accelerator Laboratory, Korea. The typical sp2 hybridization states found in graphite were also seen in graphite oxide. However, the π state disappeared near the Fermi level because of bonding between the π and oxygen-related states originating from graphite oxide, indicating electron transfer from graphite to oxygen and resulting in a downward shift of the highest occupied molecular orbital (HOMO) state to higher binding energies. The band gap opening increased to about 1.8 eV, and additional oxygen-related peaks were observed at 8.5 and 27 eV. The electronic states of graphite were also found in graphite oxide. Thus, graphite oxide has an electronic structure similar to that of pristine graphite except for the states near the Fermi level and oxygen-related states.
PACS: 73.22.-f – Electronic structure of nanoscale materials and related systems / 81.05.U- – Carbon/carbon-based materials
© EPLA, 2010
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