Volume 93, Number 1, January 2011
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||11 January 2011|
Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
Department of Physics, National University of Singapore - 2 Science Drive 3, Singapore 117542
2 NanoCore, National University of Singapore - 4 Engineering Drive 3, Singapore 117576
3 SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University - Suwon 440-746, Korea
4 School of Physical and Mathematical Sciences, Nanyang Technological University of Singapore - Singapore 637371
5 Department of Chemistry, Sungkyunkwan University - Suwon 440-746, Korea
6 School of Advanced Materials Science and Engineering, Sungkyunkwan University - Suwon 440-746, Korea
7 NUS Graduate School for Integrative Sciences and Engineering (NGS) - Singapore 117456
Accepted: 24 December 2010
Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO2 have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical-vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT), we demonstrate ultra-low-voltage operation of graphene field effect transistors within ±1 V with maximum doping exceeding 1013 cm− 2 and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics.
PACS: 72.80.Vp – Electronic transport in graphene
© EPLA, 2011
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